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Global Non-volatile Solid State Storage And Memory Technology Market Report 2021: Emerging Memories Take Off And Impact On Manufacturing And Test Equipment together (RSS) DUBLIN, Jan
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DUBLIN, Jan. 7, 2022 /PRNewswire/ -- The "Emerging Memories Take Off (2021)" report has been added to ResearchAndMarkets.com's offering.
This report address technology developments in non-volatile solid state storage and memory technologies and the impact on manufacturing and test equipment. These non-volatile memory/storage products will impact the digital storage/memory hierarchy including DRAM, SRAM, NOR Flash, NAND Flash and hard disk drives.
Current memory technologies including flash memory (NAND and NOR), DRAM, and SRAM are facing potential technology limits to their continued improvement. As a result, there are intense efforts to develop new memory technologies. Most of these new technologies utilize nonvolatile memory technologies and can be used for long-term storage or to provide a memory that does not lose information when power is not applied. This offers advantages for battery and ambient powered devices and also for energy savings in data centers.
The memories addressed in this report include PCM, RRAM, FRAM, MRAM, STT MRAM and a variety of less mainstream technologies such as carbon nanotubes. Based upon the level of current development and the characteristics of these technologies, resistive RAM (RRAM) appears to be a potential replacement for flash memory. However, flash memory has several generations of technologies that will be implemented before a replacement is required. Thus, this transition will not fully occur until the next decade at the earliest.
Micron and Intel's introduction of 3D XPoint Memory, a technology that has high endurance, performance much better than NAND, although somewhat slower than DRAM, and higher density than DRAM; is impacting the need for DRAM. Intel introduced NVMe SSDs with its Optane technology (using 3D XPoint) in 2017 and started shipping DIMM-Optane modules in 2019. 3D XPoint uses a type of phase change technology.
Magnetic RAM (MRAM) and spin tunnel torque RAM (STT MRAM) are starting to replace sNOR, SRAM and possibly DRAM. The rate of development in STT MRAM and MRAM capabilities will result in gradually lower prices, and the attractiveness of replacing volatile memory with high speed and high endurance nonvolatile memory makes these technologies very competitive, assuming that their volume increases to reduce production costs (and thus purchase prices).
Ferroelectric RAM (FRAM) and some RRAM technologies have some niche applications and with the use of HfO FRAM, the number of niche markets available for FRAM could increase in number.
Moving to a nonvolatile solid-state main memory and cache memory will reduce power usage directly as well as enable new power-saving modes, provide faster recovery from power off and enable more stable computer architectures that retain their state even when power is off. Eventually, spintronic technology, that uses spin rather than current for logic processes, could be used to make future microprocess...
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DUBLIN, Jan. 7, 2022 /PRNewswire/ -- The "Emerging Memories Take Off (2021)" report has been added to ResearchAndMarkets.com's offering.
This report address technology developments in non-volatile solid state storage and memory technologies and the impact on manufacturing and test equipment. These non-volatile memory/storage products will impact the digital storage/memory hierarchy including DRAM, SRAM, NOR Flash, NAND Flash and hard disk drives.
Current memory technologies including flash memory (NAND and NOR), DRAM, and SRAM are facing potential technology limits to their continued improvement. As a result, there are intense efforts to develop new memory technologies. Most of these new technologies utilize nonvolatile memory technologies and can be used for long-term storage or to provide a memory that does not lose information when power is not applied. This offers advantages for battery and ambient powered devices and also for energy savings in data centers.
The memories addressed in this report include PCM, RRAM, FRAM, MRAM, STT MRAM and a variety of less mainstream technologies such as carbon nanotubes. Based upon the level of current development and the characteristics of these technologies, resistive RAM (RRAM) appears to be a potential replacement for flash memory. However, flash memory has several generations of technologies that will be implemented before a replacement is required. Thus, this transition will not fully occur until the next decade at the earliest.
Micron and Intel's introduction of 3D XPoint Memory, a technology that has high endurance, performance much better than NAND, although somewhat slower than DRAM, and higher density than DRAM; is impacting the need for DRAM. Intel introduced NVMe SSDs with its Optane technology (using 3D XPoint) in 2017 and started shipping DIMM-Optane modules in 2019. 3D XPoint uses a type of phase change technology.
Magnetic RAM (MRAM) and spin tunnel torque RAM (STT MRAM) are starting to replace sNOR, SRAM and possibly DRAM. The rate of development in STT MRAM and MRAM capabilities will result in gradually lower prices, and the attractiveness of replacing volatile memory with high speed and high endurance nonvolatile memory makes these technologies very competitive, assuming that their volume increases to reduce production costs (and thus purchase prices).
Ferroelectric RAM (FRAM) and some RRAM technologies have some niche applications and with the use of HfO FRAM, the number of niche markets available for FRAM could increase in number.
Moving to a nonvolatile solid-state main memory and cache memory will reduce power usage directly as well as enable new power-saving modes, provide faster recovery from power off and enable more stable computer architectures that retain their state even when power is off. Eventually, spintronic technology, that uses spin rather than current for logic processes, could be used to make future microprocess...
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"Π€ΠΎΡΠΌΠ° ΠΎΠ΄Π΅ΠΆΠ΄Ρ" - Π²ΡΠ΅ Π΄Π»Ρ ΡΠ»ΡΠΆΠ±Ρ ΠΈ ΡΡΡΠΈΠ·ΠΌΠ° (VK)
ΠΠΎΡΠΈΠ½ΠΊΠΈ Ρ Π²ΡΡΠΎΠΊΠΈΠΌ Π±Π΅ΡΡΠ΅ΠΌ ARMYβ¦
"Π€ΠΎΡΠΌΠ° ΠΎΠ΄Π΅ΠΆΠ΄Ρ" - Π²ΡΠ΅ Π΄Π»Ρ ΡΠ»ΡΠΆΠ±Ρ ΠΈ ΡΡΡΠΈΠ·ΠΌΠ° (VK) ΠΠΎΡΠΈΠ½ΠΊΠΈ Ρ Π²ΡΡΠΎΠΊΠΈΠΌ Π±Π΅ΡΡΠ΅ΠΌ ARMY Ρ ΡΠΎΠΌ
"Π€ΠΎΡΠΌΠ° ΠΎΠ΄Π΅ΠΆΠ΄Ρ" - Π²ΡΠ΅ Π΄Π»Ρ ΡΠ»ΡΠΆΠ±Ρ ΠΈ ΡΡΡΠΈΠ·ΠΌΠ° (VK)
ΠΠΎΡΠΈΠ½ΠΊΠΈ Ρ Π²ΡΡΠΎΠΊΠΈΠΌ Π±Π΅ΡΡΠ΅ΠΌ ARMY Ρ ΡΠΎΠΌ
"Π€ΠΎΡΠΌΠ° ΠΎΠ΄Π΅ΠΆΠ΄Ρ" - Π²ΡΠ΅ Π΄Π»Ρ ΡΠ»ΡΠΆΠ±Ρ ΠΈ ΡΡΡΠΈΠ·ΠΌΠ° (VK)
ΠΠΎΡΠΈΠ½ΠΊΠΈ Ρ Π²ΡΡΠΎΠΊΠΈΠΌ Π±Π΅ΡΡΠ΅ΠΌ ARMYβ¦